The STP170N8F7 is a robust and efficient N-channel Power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This device is part of ST's STripFET™ F7 series, which is known for its low on-resistance and low gate charge, making it highly suitable for a wide range of power applications.

Key Features

• High Drain-Source Breakdown Voltage (V<sub>DS): With a rating of 80V, the STP170N8F7 can handle high voltage applications, ensuring reliability and performance stability.
• Low On-Resistance (R<sub>DS(on)): This MOSFET boasts an extremely low on-resistance of just 6.4 mΩ max, which translates to reduced conduction losses and improved overall efficiency.
• High Continuous Drain Current (I<sub>D): It supports a continuous drain current of 120A, capable of delivering high power for demanding applications.
• Low Gate Charge (Q<sub>g): The low gate charge feature ensures fast switching performance, which is crucial for high-frequency power conversion systems.
• 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, providing additional reliability under extreme conditions.

Applications

The STP170N8F7 is versatile and can be used in a variety of applications, including:

• Switch Mode Power Supplies (SMPS)
• High Efficiency DC-DC Converters
• Motor Control Systems
• Automotive Applications
• Power Management Solutions

Package and Quality

The device is offered in a TO-220 package, which is widely used and known for its good thermal and electrical characteristics. The TO-220 packaging allows for easy mounting on heat sinks which is essential for high power applications.

STMicroelectronics is committed to delivering high-quality products. The STP170N8F7 is no exception, and it complies with the highest industry standards for performance and reliability.

For more detailed specifications and application notes, customers are encouraged to consult the official datasheet and product documentation available on the STMicroelectronics website.