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STP185N55F3

Part No STP185N55F3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 120A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 100nC @ 10V
Max Input Capacitance 6800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 330W (Tc)
Maximum Rds On at Id,Vgs 3.8 mOhm @ 60A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1103658-STP185N55F3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STP185N55F3 CAD Model

Description

STP185N55F3 - N-Channel MOSFET by STMicroelectronics

The STP185N55F3 is a high-performance N-Channel MOSFET brought to you by STMicroelectronics, a global semiconductor leader known for its cutting-edge technology and solutions. This MOSFET is part of ST's STripFET™ F3 series, which is renowned for its low on-resistance and high switching performance. Designed to address the demanding requirements of power applications, the STP185N55F3 is an ideal choice for a wide range of electronic circuits.

Key Features

  • Low On-Resistance: The STP185N55F3 boasts an exceptionally low on-resistance (R<sub>DS(on)), which enhances its efficiency and reduces conduction losses, making it suitable for high-efficiency power management applications.
  • High Current Capability: With a continuous drain current (I<sub>D) rating of up to 120A, this MOSFET can handle high current loads, ensuring reliable performance in power-intensive applications.
  • High Voltage Rating: The device supports a drain-source voltage (V<sub>DS) of up to 55V, providing a good safety margin for a variety of applications, including automotive and industrial systems.
  • Fast Switching Speed: The fast switching characteristics of the STP185N55F3 make it an excellent choice for high-speed switching applications, reducing switching losses and improving overall system efficiency.
  • Low Gate Charge: A low gate charge (Q<sub>g) facilitates faster switching and reduces the power required to drive the gate, further enhancing the device's performance.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability and longevity even under harsh conditions.

Applications

The versatility of the STP185N55F3 allows it to be used in a multitude of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Drives
  • Automotive Applications
  • Power Management Systems

With its robust package design, the STP185N55F3 is encapsulated in a TO-220 package, which is widely accepted for its ease of integration into various circuit designs. The combination of high performance, reliability, and efficiency makes the STP185N55F3 a top choice for engineers and designers looking to optimize their power management systems.

For detailed specifications, application notes, and further information, interested parties are encouraged to visit the official STMicroelectronics website or contact their local ST sales office.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.3391 $60.1038
43+ $2.7397 $117.8071
66+ $2.6542 $175.1772
90+ $2.5687 $231.1830
117+ $2.4833 $290.5461
156+ $2.2268 $347.3808
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 63,600 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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