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STP24NM65N

Part No STP24NM65N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 19A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 70nC @ 10V
Max Input Capacitance 2500pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 9.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 212356-STP24NM65N
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian STP24NM65N CAD Model

Description

STP24NM65N - STMicroelectronics N-channel MOSFET

The STP24NM65N is a high-performance, N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is designed to deliver the best in efficiency and reliability for a wide range of applications, including switch-mode power supplies (SMPS), lighting, DC-AC converters, and motor control systems.

Key Features

  • Voltage Rating: The STP24NM65N is rated for a maximum drain-source voltage of 650V, making it suitable for high-voltage applications.
  • Current Capability: It offers a continuous drain current of 17A, ensuring robust performance for demanding loads.
  • Low On-Resistance: With an on-resistance of just 0.19 ohms, this MOSFET ensures minimal power loss and improved overall efficiency.
  • Fast Switching Speed: The device features a fast switching speed, which is critical for reducing switching losses in power conversion applications.
  • 100% Avalanche Tested: Guarantees reliable operation even under extreme conditions, making it suitable for rugged applications.

Advanced Technology

The STP24NM65N incorporates STMicroelectronics' advanced MDmesh™ technology, which combines a vertical structure with a patented strip layout to yield one of the best on-resistance and dynamic performance figures in the industry. This technology enables the MOSFET to achieve low gate charge and reduced capacitance, leading to superior energy efficiency.

Applications

With its high-performance characteristics, the STP24NM65N is particularly well-suited for high-efficiency converters and power management solutions. Its robust design ensures that it can be used in:

  • Power supplies for servers, telecom, and industrial systems
  • LED lighting solutions
  • Solar inverters and renewable energy systems
  • Electric vehicle charging stations
  • Motor drives and control units

For designers and engineers seeking a reliable and efficient N-channel MOSFET, the STP24NM65N from STMicroelectronics offers an ideal solution that combines performance, durability, and energy efficiency.

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