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STP80NF55-08AG

Part No STP80NF55-08AG
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series Automotive, AEC-Q101, STripFET™
Package Tube
Product Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 112 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3740 pF @ 15 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number STP80
Other Names 497-17149
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278150-STP80NF55-08AG
Ultra Librarian 3D Model Ultra Librarian STP80NF55-08AG CAD Model

Description

STP80NF55-08AG - STMicroelectronics

STP80NF55-08AG MOSFET

The STP80NF55-08AG is a state-of-the-art N-channel Power MOSFET produced by STMicroelectronics, a global leader in semiconductor solutions. This device is a part of ST's STripFET™ II series, which is renowned for its low on-resistance and minimal gate charge. These characteristics make the STP80NF55-08AG an excellent choice for high-efficiency power management applications.

With a maximum continuous drain current (ID) of 80A, this MOSFET can handle significant power without overheating, thanks to its advanced design and robust packaging. The device features a drain-source voltage (VDSS) of 55V, which allows it to operate effectively in a wide range of circuit configurations and ensures a broad spectrum of applications, from DC-DC converters to motor drives.

The STP80NF55-08AG has an extremely low on-resistance (RDS(on)) of just 8 milliohms at a gate voltage of 10V. This low RDS(on) translates to reduced conduction losses, enhancing overall system efficiency, which is critical for power-sensitive designs. Additionally, its low gate charge (Qg) minimizes switching losses, making it ideal for high-frequency operations.

The device comes in a TO-220 package, which is widely accepted in the industry for its ease of installation and excellent thermal performance. The TO-220 package also offers a high level of ruggedness, making the STP80NF55-08AG a reliable choice for demanding environments.

Not only does the MOSFET excel in performance, but it is also designed with the environment in mind. It is compliant with the RoHS directive, meaning it is free from hazardous substances, making it a safe and responsible choice for electronic developers who are conscious of environmental sustainability.

In summary, the STP80NF55-08AG from STMicroelectronics is a powerful, efficient, and reliable component that meets the needs of modern high-performance power management systems. Its advanced technology and environmentally friendly design make it a top choice for engineers looking to optimize their applications.

Specifications:

  • Product Category: Power MOSFET
  • Manufacturer: STMicroelectronics
  • Part Number: STP80NF55-08AG
  • Technology: STripFET™ II
  • Package/Case: TO-220
  • Drain-Source Voltage (VDSS): 55V
  • Continuous Drain Current (ID): 80A
  • On-Resistance (RDS(on)): 8 mΩ
  • Gate Charge (Qg): Low
  • RoHS: Compliant

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