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STP8NM50FP

Part No STP8NM50FP
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 8A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 415pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 800 mOhm @ 2.5A, 10V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 054278-STP8NM50FP
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP8NM50FP CAD Model

Description

STP8NM50FP - N-channel 500V - 1.2Ω - 8A TO-220/TO-220FP MDmesh™ Power MOSFET

The STP8NM50FP is a high voltage N-channel Power MOSFET designed and manufactured by STMicroelectronics, one of the leading players in semiconductor solutions. This MOSFET is part of the MDmesh™ family, which is well-known for its excellent efficiency at high switching frequencies, with low on-resistance and reduced gate charge. The device is housed in a TO-220/TO-220FP package, making it suitable for a wide range of applications including switching regulators, switching converters, motor drivers, and power management solutions.

With a drain-source voltage (V<sub>DS) of 500V, the STP8NM50FP is capable of handling high voltage operations, which makes it particularly suitable for high-performance power supplies and lighting applications. The MOSFET has a continuous drain current (I<sub>D) of 8A, ensuring it can manage significant power levels for a variety of demanding tasks.

The on-resistance (R<sub>DS(on)) of the device is as low as 1.2Ω, which contributes to its high efficiency by minimizing conduction losses. The low gate charge (Q<sub>g) helps to reduce the switching losses, allowing for faster switching speeds and improved overall performance in high-frequency circuits.

STMicroelectronics has designed the STP8NM50FP with several built-in protection features to enhance its reliability and longevity. These include a 100% avalanche tested rugged device, which ensures the MOSFET can withstand high energy pulses in the avalanche and commutation mode. The device also has a high dv/dt capability, providing further protection against harsh operating conditions.

For ease of implementation, the STP8NM50FP is fully characterized at 150°C, which provides designers with a clear understanding of how the device will perform in high-temperature environments. Its TO-220/TO-220FP package is universally recognized and appreciated for its mechanical robustness and thermal performance, making it a popular choice for both prototyping and mass production.

In summary, the STP8NM50FP from STMicroelectronics is a robust and efficient solution for a variety of high-voltage applications that require a Power MOSFET with a good balance between switching performance and on-state resistance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.4043 $58.6235
350+ $0.3315 $116.0250
540+ $0.3211 $173.3940
745+ $0.3107 $231.4715
965+ $0.3003 $289.7895
1,290+ $0.2691 $347.1390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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