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Same model may have multiple batches, images only for reference.
IXTP1R4N100P Real Image
Same model may have multiple batches, images only for reference.

IXTP1R4N100P

Part No IXTP1R4N100P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 1.4A TO220AB / N-Channel 1000 V 1.4A (Tc) 63W (Tc) Through Hole TO-220-3
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 17.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 25 V
Power Dissipation (Max) 63W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-220-3
Case / Package TO-220-3
Base Product Number IXTP1
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1324592-IXTP1R4N100P
Ultra Librarian 3D Model Ultra Librarian IXTP1R4N100P CAD Model

Description

The IXTP1R4N100P is an N-channel MOSFET transistor from IXYS. It is designed for through-hole mounting and is packaged in a TO-220-3 case. With a drain to source voltage of 1000V and a continuous drain current of 1.4A (Tc), it has a maximum on-resistance of 11Ohm at 500mA and 10V.

  • Gate Charge: 17.8 nC @ 10V
  • Input Capacitance: 450 pF @ 25V
  • Power Dissipation: 63W (Tc)
  • Operating Temperature Range: -55°C ~ 150°C (TJ)
  • Applications: power supplies, motor control, and lighting

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Quantity Unit Price Ext. Price
21+ $2.8142 $59.0982
51+ $2.3091 $117.7641
78+ $2.2370 $174.4860
107+ $2.1649 $231.6443
138+ $2.0926 $288.7788
185+ $1.8762 $347.0970
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Availability: 5,700 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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