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STP9NM50N

Part No STP9NM50N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 7.5A TO-220
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 570pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 70W (Tc)
Maximum Rds On at Id,Vgs 560 mOhm @ 3.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1103725-STP9NM50N
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STP9NM50N CAD Model

Description

The STP9NM50N is a state-of-the-art N-channel Power MOSFET presented by STMicroelectronics, a global semiconductor leader. This device is a part of the MDmesh™ family, which is renowned for its excellent on-resistance and high switching performance. The MOSFET is designed to meet the rigorous demands of high-efficiency power conversion applications.

With a drain-source voltage (VDS) of 500V, the STP9NM50N is engineered to handle high voltage operations, making it suitable for a variety of applications, including switch-mode power supplies, lighting, welding, and high-performance drives. Its low on-resistance of 1.1Ω ensures minimal conduction losses, while the 8A current rating signifies its capability to handle significant power.

The device is packaged in both TO-220 and TO-220FP, providing flexibility for different mounting and heat dissipation requirements. The TO-220 package is known for its ease of installation and ability to handle higher currents with proper heat sinking. On the other hand, the TO-220FP offers a thinner profile, which is beneficial for applications with space constraints.

The STP9NM50N leverages STMicroelectronics' advanced MDmesh™ technology, which combines a vertical structure with a patented strip layout to yield one of the industry's best on-resistance and dynamic performance. This technology is optimized for high commutation speed and minimal switching losses, making the MOSFET an excellent choice for high-frequency power switching.

Key features of the STP9NM50N include a fast recovery diode, which is critical for high-efficiency power conversion. It also boasts a low threshold voltage, which facilitates drive circuitry simplification by allowing the use of lower voltage driving signals. This feature is particularly beneficial in low-power applications where power conservation is paramount.

In summary, the STP9NM50N from STMicroelectronics is a robust and reliable component for designers seeking to enhance the efficiency and performance of their power conversion systems. Its advanced features and flexible packaging options make it a versatile choice for a wide range of industrial and consumer applications.

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