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STS8C5H30L

Part No STS8C5H30L
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 8A/5.4A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A, 5.4A
Maximum Rds On at Id,Vgs 22 mOhm @ 4A, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 10nC @ 5V
Max Input Capacitance 857pF @ 25V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 031546-STS8C5H30L
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STS8C5H30L CAD Model

Description

Introducing the STS8C5H30L Power MOSFET from STMicroelectronics

The STS8C5H30L is a state-of-the-art Power MOSFET brought to you by STMicroelectronics, a global semiconductor leader known for its innovative approach and cutting-edge technology. This particular MOSFET is designed to deliver high efficiency and reliability for a wide range of applications, including switch-mode power supplies, motor control systems, automotive applications, and more.

The device features a low threshold drive, making it suitable for low voltage applications that require efficient power management. It operates as an N-channel MOSFET with a drain-source voltage (V<sub>DS) of up to 30V, which allows it to handle moderate power levels while maintaining a compact form factor.

One of the key advantages of the STS8C5H30L is its low on-resistance (R<sub>DS(on)), which results in reduced conduction losses and improves overall system efficiency. This is particularly beneficial in applications where power conservation is critical. Additionally, the device boasts a high continuous drain current (I<sub>D) capability, providing ample current for a variety of power-intensive tasks.

The STS8C5H30L is also designed with robustness in mind. It features a high ruggedness level and can withstand high energy pulses in avalanche and commutation modes. This durability makes it an excellent choice for tough industrial environments where components are exposed to stress and variable conditions.

In terms of packaging, the STS8C5H30L comes in a surface-mount package that is optimized for easy integration into your PCB design. The package is designed to minimize on-board real estate usage while maximizing thermal performance, ensuring that the MOSFET operates within its specified temperature range even under high load conditions.

To sum up, the STS8C5H30L from STMicroelectronics is a highly efficient, reliable, and rugged Power MOSFET that is suitable for a vast array of electronic applications. Its low on-resistance, high current capability, and robust design make it an ideal choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.8677 $51.6186
43+ $2.3530 $101.1790
66+ $2.2794 $150.4404
91+ $2.2059 $200.7369
118+ $2.1324 $251.6232
157+ $1.9118 $300.1526
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 64 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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