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STW70N65DM6

Part No STW70N65DM6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 68A TO247 / N-Channel 650 V 68A (Tc) 450W (Tc) Through Hole TO-247-3
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr STMicroelectronics
Series MDmesh™ DM6
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 34A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 125 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 4900 pF @ 100 V
FET Feature -
Power Dissipation (Max) 450W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number STW70
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1355951-STW70N65DM6
Ultra Librarian 3D Model Ultra Librarian STW70N65DM6 CAD Model

Description

STW70N65DM6 - N-channel 650 V, 0.036 Ohm typ., 60 A MDmesh DM6 Power MOSFET

The STW70N65DM6 is a state-of-the-art N-channel Power MOSFET presented by STMicroelectronics, belonging to their MDmesh DM6 series. This device is engineered with the latest advancements in power MOSFET technology, and it is designed to meet the high efficiency and reliability demands of modern high-performance power conversion applications.

With a drain-source voltage (V<sub>DS) of 650 V, the STW70N65DM6 is well-suited for applications that require high voltage capabilities. Its low on-resistance (R<sub>DS(on)) of 0.036 Ohm typ. ensures minimal conduction losses, making it an excellent choice for high-efficiency power supplies, solar inverters, welding equipment, and other energy-intensive applications.

The device can handle a continuous drain current (I<sub>D) of up to 60 A, contributing to its robust performance in challenging conditions. The STW70N65DM6 also features a fast recovery diode, which is critical for high-speed switching and further enhances the overall efficiency of the system it is incorporated into.

The MOSFET's package is designed with low parasitic inductance and optimized for efficient heat dissipation, ensuring stable operation even under high current loads. The package is also engineered to withstand the mechanical stresses encountered in rugged environments, making the STW70N65DM6 a reliable choice for industrial applications.

STMicroelectronics has equipped the STW70N65DM6 with their proprietary MDmesh DM6 technology, which combines a high voltage super-junction structure with a new, advanced body diode. This results in a product that exhibits reduced switching losses, lower on-state resistances, and a softer commutation behavior, thereby reducing electromagnetic interference (EMI) in electronic circuits.

In summary, the STW70N65DM6 is an innovative power MOSFET that offers superior performance for high voltage applications requiring high efficiency and power density. It exemplifies STMicroelectronics' commitment to providing advanced semiconductor solutions that meet the evolving needs of the electronics industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $38.2101 $76.4202
4+ $31.3519 $125.4076
5+ $30.3721 $151.8605
7+ $29.3924 $205.7468
9+ $28.4126 $255.7134
12+ $25.4734 $305.6808
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,900 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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