The STW7NC80Z is a robust and efficient power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This particular MOSFET is part of the N-channel Zener-protected SuperMESH™ series, which is well-known for its high blocking voltage capacity, low on-resistance, and enhanced overall performance in a wide range of applications.
Key Features:
- High Voltage Capability: The STW7NC80Z boasts a high drain-source breakdown voltage (V<sub>DS) of 800V, making it suitable for high voltage applications.
- Low On-Resistance: With a low on-resistance (R<sub>DS(on)), this MOSFET ensures improved efficiency and reduced conduction losses.
- Zener-Protected: The built-in Zener diodes provide gate-source protection, enhancing the device's robustness against overvoltage transients.
- Reduced Gate Charge: A lower gate charge (Q<sub>g) facilitates faster switching, contributing to the device's high-speed operation and reduced switching losses.
- 100% Avalanche Tested: Ensuring reliability, each device is tested for avalanche ruggedness, making it suitable for tough environmental conditions.
Applications:
The STW7NC80Z is designed for a variety of applications that require high voltage operation and efficient power management. These include:
- Switching power supplies
- Power converters
- Motors and motor controls
- Lighting systems
- High-performance computing
- Automotive and industrial applications
Technical Specifications:
Parameter
Value
V<sub>DS
800V
R<sub>DS(on)
Typically 1.7 Ω
Q<sub>g
Typically 45 nC
Package
TO-247
With its combination of high voltage capacity, efficiency, and protection features, the STW7NC80Z is a reliable choice for designers and engineers looking to optimize their power management systems.
