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STW80NF55-08

Part No STW80NF55-08
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 150nC @ 10V
Max Input Capacitance 3850pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 037107-STW80NF55-08
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STW80NF55-08 CAD Model

Description

STW80NF55-08 - N-Channel MOSFET by STMicroelectronics

The STW80NF55-08 is a robust N-channel Power MOSFET designed and manufactured by the renowned semiconductor company, STMicroelectronics. This high-performance MOSFET is part of STMicroelectronics' STripFET™ series, which is known for its low on-resistance and low gate charge, making it an excellent choice for a wide range of power applications.

With a drain-source voltage (VDS) of 55V and a continuous drain current (ID) of 80A, the STW80NF55-08 is capable of handling high current loads efficiently. The device boasts a low threshold voltage, ensuring that it can be driven at lower gate voltages, which is beneficial for battery-operated devices and low-voltage applications.

The MOSFET's RDS(on) is exceptionally low, which translates to reduced conduction losses and improved overall efficiency. This feature is particularly important for power supply designs, motor control circuits, and other applications where power efficiency is critical.

The STW80NF55-08 also features a 100% avalanche tested design, ensuring reliability and robustness in harsh conditions. This makes it suitable for automotive and industrial applications where the MOSFET must withstand rigorous stress.

In terms of packaging, the STW80NF55-08 is available in a TO-247 package, which is known for its high power dissipation capabilities. The package is designed to offer excellent thermal performance, which is essential for maintaining stability and prolonging the life of the MOSFET when operating at high currents or in high-temperature environments.

Overall, the STW80NF55-08 is a high-quality, durable, and efficient N-channel MOSFET that is well-suited for a variety of applications, including switching regulators, DC-DC converters, motor drivers, and power management solutions. Its combination of low on-resistance, high current capability, and robust package makes it a reliable choice for designers and engineers looking to optimize their power circuits.

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