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Same model may have multiple batches, images only for reference.
TSM170N06CP
Same model may have multiple batches, images only for reference.

TSM170N06CP

Part No TSM170N06CP
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 60V, 38A, SINGLE N-CHANNEL POWER / N-Channel 60 V 38A (Tc) 46W (Tc) Surface Mount TO-252, (D-Pak)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr Taiwan Semiconductor
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 17mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 25 V
FET Feature -
Power Dissipation (Max) 46W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number TSM170
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 5,000 pcs
Win Source Part Number 1383742-TSM170N06CP
Ultra Librarian 3D Model Ultra Librarian TSM170N06CP CAD Model

Description

The TSM170N06CP is an N-Channel MOSFET transistor from Taiwan Semiconductor.

  • Category: Single FETs, MOSFETs
  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 38A @ 25°C
  • Rds On (Max): 17mOhm @ 20A and 10V gate-source voltage (Vgs)
  • Gate-Source Threshold Voltage (Vgs(th)): 2.5V @ 250μA
  • Power Dissipation: 46W
  • Mounting Type: Surface Mount
  • Package: TO-252-3, DPak
  • Gate Charge (Qg): 15nC @ 4.5V
  • Input Capacitance (Ciss): 900pF @ 25V
  • Operating Temperature Range: -55°C to 150°C
  • Package Quantity: 5,000 pcs

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