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Same model may have multiple batches, images only for reference.
TSM60NB600CF
Same model may have multiple batches, images only for reference.

TSM60NB600CF

Part No TSM60NB600CF
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 600V, 8A, SINGLE N-CHANNEL POWER
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Taiwan Semiconductor Corporation
Series -
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 528 pF @ 100 V
FET Feature -
Power Dissipation (Max) 41.7W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ITO-220S
Package / Case TO-220-3 Full Pack
Base Product Number TSM60
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1380171-TSM60NB600CF
Ultra Librarian 3D Model Ultra Librarian TSM60NB600CF CAD Model

Description

The Taiwan Semiconductor Corporation TSM60NB600CF is a N-Channel MOSFET manufactured by.

  • Series: TSM60
  • Drain to Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 8A @ 25°C
  • On-Resistance (Rds On): 600mOhm @ 1.7A, 10V Vgs
  • Gate Threshold Voltage (Vgs(th)): 4V @ 250μA
  • Gate Charge (Qg): 16nC @ 10V Vgs
  • Input Capacitance (Ciss): 528pF @ 100V Vds
  • Power Dissipation (Max): 41.7W
  • Package: TO-220-3 full pack
  • RoHS Compliant: Yes

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