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CSD19538Q2T

Part No CSD19538Q2T
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 13.1A 6WSON / N-Channel 100 V 13.1A (Tc) 2.5W (Ta), 20.2W (Tc) Surface Mount 6-WSON (2x2)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Texas Instruments
Series NexFET™
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 13.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 59mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 454 pF @ 50 V
Power Dissipation (Max) 2.5W (Ta), 20.2W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 6-WSON (2x2)
Package / Case 6-WDFN Exposed Pad
Base Product Number CSD19538
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 296-44612-1,296-44612-2,296-44612-6
Standard Package 250
Win Source Part Number 1131740-CSD19538Q2T
Ultra Librarian 3D Model Ultra Librarian CSD19538Q2T CAD Model

Description

The CSD19538Q2T is a state-of-the-art N-Channel NexFET™ power MOSFET from Texas Instruments, designed to deliver high performance in a compact footprint. This MOSFET is part of TI's extensive portfolio of semiconductor solutions, engineered to meet the demanding requirements of a wide range of applications.

Key Features

  • Low On-Resistance: The CSD19538Q2T boasts an ultra-low on-resistance (RDS(on)) of just 5.8 mΩ at VGS = 10V, which minimizes conduction losses and enhances efficiency in power conversion applications.
  • High Continuous Drain Current: With a continuous drain current (ID) of 100 A, this MOSFET can handle high current loads, making it suitable for high-power density applications.
  • Thermal Management: The device features a robust thermal design with a maximum junction temperature of 150°C, ensuring reliable operation even under high-temperature conditions.
  • SON 5x6mm Package: The CSD19538Q2T is housed in a small outline no-lead (SON) package measuring 5x6mm, which allows for a compact PCB layout and is ideal for space-constrained applications.
  • Fast Switching: The MOSFET's fast switching characteristics are optimized for efficient operation at high switching frequencies, which is critical for applications such as DC/DC converters, motor drives, and power inverters.

Applications

The CSD19538Q2T is versatile enough to be used in a variety of applications, including:

  • Power supplies
  • DC/DC converters
  • Motor control circuits
  • Power inverters
  • Load switches
  • Hot-swap circuits

Quality and Reliability

As with all Texas Instruments products, the CSD19538Q2T MOSFET is manufactured to the highest quality standards. It is designed to meet stringent reliability requirements, ensuring a long operational life and consistent performance across various conditions.

For engineers and designers looking for a robust, efficient, and space-saving power MOSFET solution, the CSD19538Q2T from Texas Instruments represents an excellent choice that combines cutting-edge technology with practical features tailored to modern electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2859 $50.0325
430+ $0.2346 $100.8780
660+ $0.2273 $150.0180
910+ $0.2199 $200.1090
1,180+ $0.2126 $250.8680
1,575+ $0.1906 $300.1950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,340 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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