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CSD25303W1015

Part No CSD25303W1015
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3A 6DSBGA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Texas Instruments
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 4.3nC @ 4.5V
Max Input Capacitance 435pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 58 mOhm @ 1.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-DSBGA (1x1.5)
Dimension 6-UFBGA, DSBGA
Win Source Part Number 1030672-CSD25303W1015
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian CSD25303W1015 CAD Model

Description

Introducing the CSD25303W1015 P-Channel NexFET™ Power MOSFET from Texas Instruments

The CSD25303W1015 is a state-of-the-art P-Channel NexFET™ power MOSFET brought to you by Texas Instruments, a global semiconductor company that designs and manufactures innovative technologies. This MOSFET is designed to deliver high efficiency and power density for a wide range of applications, making it an ideal choice for power management solutions.

Key Features of the CSD25303W1015

  • Low On-Resistance: The CSD25303W1015 boasts an ultra-low on-resistance (R<sub>DS(on)) of 10.5 mΩ at V<sub>GS = -4.5V, which significantly reduces conduction losses and improves overall efficiency.
  • High Power and Current Handling: With a continuous drain current (I<sub>D) of -20 A, this MOSFET can handle high power and current, making it suitable for demanding applications.
  • Advanced Packaging: The device comes in a compact 2 mm x 2 mm SON package with a PowerPAD™ bottom. This small footprint is ideal for space-constrained applications, while the PowerPAD™ enhances thermal performance.
  • Fast Switching Speed: Fast switching capabilities of the CSD25303W1015 contribute to reduced switching losses, which is critical for high-frequency power conversion.

Applications

The versatility of the CSD25303W1015 allows it to be used in a broad spectrum of applications. It is particularly well-suited for:

  • Load switches
  • Battery management systems
  • Power supply circuits
  • DC/DC converters
  • Portable devices

Reliability and Performance

With Texas Instruments' commitment to quality, the CSD25303W1015 is manufactured to the highest standards. It provides reliable performance over a wide operating temperature range, ensuring stability and longevity in your application. The device also includes built-in ESD protection for enhanced durability.

Overall, the CSD25303W1015 P-Channel NexFET™ power MOSFET from Texas Instruments is an excellent choice for designers looking for a high-performance, efficient, and space-saving solution for their power management needs. Its robust feature set and versatile application range make it a valuable component in any power-sensitive design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.5956 $50.6260
205+ $0.4887 $100.1835
320+ $0.4735 $151.5200
440+ $0.4582 $201.6080
565+ $0.4429 $250.2385
760+ $0.3971 $301.7960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,560 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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