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CSD25310Q2

Part No CSD25310Q2
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 48A 6SON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Texas Instruments
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1.1V @ 250μA
Max Gate Charge 4.7nC @ 4.5V
Max Input Capacitance 655pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 2.9W (Ta)
Maximum Rds On at Id,Vgs 23.9 mOhm @ 5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-WSON (2x2)
Dimension 6-WDFN Exposed Pad
Win Source Part Number 1030673-CSD25310Q2
Family Name CSD25310Q2
Introduction Date January 21, 2014
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2028
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian CSD25310Q2 CAD Model

Description

Introducing the CSD25310Q2 NexFET™ Power MOSFET by Texas Instruments

The CSD25310Q2 is a state-of-the-art power MOSFET designed and produced by Texas Instruments, a leader in semiconductor innovation. This component is part of the NexFET™ product line, which is renowned for its high efficiency and performance in power management applications. The CSD25310Q2 is specifically engineered to meet the demanding requirements of modern electronic circuits, providing an optimal solution for power conversion and management.

Key Features and Benefits

  • Ultra-Low On-Resistance: The CSD25310Q2 boasts an exceptionally low on-resistance (R<sub>DS(on)) of just 25 mΩ at V<sub>GS = 4.5 V, which significantly reduces power losses and improves overall efficiency.
  • Advanced Power Packaging: Enclosed in a compact 2x2 mm SON package with a 0.8 mm pitch, the device is designed for space-constrained applications, enabling designers to minimize PCB space without sacrificing performance.
  • High Continuous Drain Current: With a continuous drain current (I<sub>D) of 20 A, this MOSFET can handle high current levels, making it suitable for demanding power applications.
  • Optimized Gate Charge: The low gate charge (Q<sub>g) of the CSD25310Q2 facilitates faster switching speeds, which is crucial for improving the performance in high-frequency power supplies and DC-DC converters.
  • Thermal Management: The power MOSFET is designed with excellent thermal characteristics, ensuring reliable operation even under high temperature conditions.

Applications

The versatility of the CSD25310Q2 makes it an ideal choice for a wide range of applications, including:

  • DC-DC Converters
  • Power Supply Modules
  • Battery Management Systems
  • Load Switches
  • Point of Load (POL) Solutions

Overall, the CSD25310Q2 NexFET™ Power MOSFET is a powerful component that offers designers a blend of efficiency, reliability, and compactness. Whether it's for consumer electronics, automotive systems, or industrial equipment, this MOSFET is engineered to deliver top-notch performance where it matters most. By integrating the CSD25310Q2 into your design, you can expect a significant boost in the efficiency and longevity of your power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
330+ $0.1520 $50.1600
705+ $0.1424 $100.3920
1,095+ $0.1376 $150.6720
1,565+ $0.1280 $200.3200
2,030+ $0.1232 $250.0960
2,535+ $0.1184 $300.1440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,770 pieces
MOQ: 330 pcs
Order Increment : 1 pcs
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