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CSD25501F3

Part No CSD25501F3
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3.6A 3LGA / P-Channel 20 V 3.6A (Ta) 500mW (Ta) Surface Mount 3-LGA (0.73x0.64)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Texas Instruments
Series FemtoFET™
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 76mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id 1.05V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.33 nC @ 4.5 V
Vgs (Max) -20V
Input Capacitance (Ciss) (Max) @ Vds 385 pF @ 10 V
Power Dissipation (Max) 500mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 3-LGA (0.73x0.64)
Package / Case 3-XFLGA
Base Product Number CSD25501
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 852711-CSD25501F3
Ultra Librarian 3D Model Ultra Librarian CSD25501F3 CAD Model

Description

Introducing the Texas Instruments CSD25501F3 NexFET™ Power MOSFET

The Texas Instruments CSD25501F3 is a state-of-the-art NexFET™ power MOSFET designed to deliver high-performance, high-efficiency solutions for compact and energy-sensitive applications. This advanced MOSFET is a testament to Texas Instruments' commitment to providing innovative power management technology that meets the evolving demands of modern electronic devices.

Key Features of CSD25501F3

  • Low On-Resistance: The CSD25501F3 boasts an ultra-low on-resistance (R<sub>DS(on)) of just 20 mΩ at V<sub>GS = 4.5V, which minimizes conduction losses and enhances overall efficiency.
  • High Continuous Drain Current: With a continuous drain current (I<sub>D) of up to 14 A, this MOSFET can handle high current loads, making it suitable for a wide range of power-intensive applications.
  • Compact Footprint: Encased in a tiny 3-pin SOT-23 package, the CSD25501F3 is ideal for space-constrained designs, allowing for high-density board layouts.
  • Low Threshold Voltage: The device features a low threshold voltage (V<sub>th), ensuring it can be driven at lower gate voltages, which is beneficial for battery-operated and low-voltage circuits.

Applications

The versatility of the CSD25501F3 makes it an excellent choice for a variety of applications, including:

  • DC/DC conversion
  • Load switches
  • Power management for portable electronics
  • Battery-powered systems
  • Motor control circuits

Quality and Reliability

Texas Instruments is renowned for its rigorous testing and quality control processes. The CSD25501F3 is no exception, ensuring high reliability and performance consistency. This MOSFET is designed to meet the requirements of the most demanding electronic systems, providing designers with confidence in their power management solutions.

Conclusion

The Texas Instruments CSD25501F3 NexFET™ power MOSFET is an essential component for designers looking to improve power efficiency and save space in their next-generation electronic designs. Its low on-resistance, high current capability, and compact size make it an ideal choice for a wide array of applications, from portable devices to industrial power systems. With the CSD25501F3, engineers can expect a combination of performance, efficiency, and reliability that is synonymous with Texas Instruments' products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
500+ $0.1009 $50.4500
1,060+ $0.0946 $100.2760
1,645+ $0.0914 $150.3530
2,355+ $0.0850 $200.1750
3,060+ $0.0818 $250.3080
3,820+ $0.0786 $300.2520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 240,000 pieces
MOQ: 500 pcs
Order Increment : 1 pcs
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