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Same model may have multiple batches, images only for reference.
2SA1013-O real image
Same model may have multiple batches, images only for reference.

2SA1013-O

Part No 2SA1013-O
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description Trans GP BJT PNP 160V 1A 3-Pin TO-92 Mod / TRANS PNP 1A 160V TO226-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity PNP
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 160V
Max Vce (sat) 1.5V @ 50mA, 500mA
Collector Cut-off Current(Max) 1μA (ICBO)
Typical Gain (hFE) (Min) 60 @ 200mA, 5V
Maximum Power Dissipation 900mW
Frequency - Transition 50MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-92L
Win Source Part Number 153269-2SA1013-O
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name 2SA1013O
Introduction Date October 03, 1997
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SA1013-O CAD Model

Description

Description

The 2SA1013-O is a specific grade within the 2SA1013 series. Known for its specific hFE rankings, it's perfect for applications demanding precise current gain characteristics.

Features and Benefits

  • Specifically designed hFE range suitable for tight tolerance applications.
  • Excellent power amplification capabilities for audio electronics.
  • Robust structure suitable for high reliability applications.

Applications

  • Precision Amplifiers
  • Power Management Circuits
  • Signal Conditioners
  • Frequency Multiplier Circuits

Providing consistent and high-level performance, the 2SA1013-O is an excellent choice for high-precision tasks.

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Quantity Unit Price Ext. Price
995+ $0.0504 $50.1480
2,120+ $0.0472 $100.0640
3,290+ $0.0456 $150.0240
4,710+ $0.0425 $200.1750
6,115+ $0.0409 $250.1035
7,635+ $0.0393 $300.0555
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