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2SA1020-Y(T6CN

Part No 2SA1020-Y(T6CN
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 15+
Reference case TO-92L
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 721438-2SA1020-Y(T6CN
Popularity Low
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SA1020-Y(T6CN CAD Model

Description

The 2SA1020-Y(T6CN is a PNP bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. BJTs are three-terminal semiconductor devices that are used for amplification and switching purposes in electronic circuits. The 'Y' in the part number indicates the gain classification of the transistor, while '(T6CN' likely refers to specific packaging or manufacturing details.

Applications

  • Audio Amplifiers: Used in pre-amplifiers and output stages of audio amplification systems.
  • Switching Circuits: Employed as a switch to control current flow in various electronic circuits.
  • General Purpose Amplification: Suitable for amplifying weak signals in electronic devices.
  • Signal Processing: Used in signal conditioning and processing circuits.
  • Driver Stages: Utilized to drive larger loads or subsequent stages in electronic circuits.

Features

  • PNP Transistor: Functions as a current-controlled current source, suitable for sourcing current.
  • High Current Gain: Provides substantial amplification of the input signal.
  • Low Saturation Voltage: Minimizes power loss during switching operations.
  • Good Linearity: Ensures accurate signal amplification with minimal distortion.
  • Small Signal Amplification: Designed for amplifying small amplitude signals.

Benefits

  • Efficient Amplification: Provides effective amplification of weak input signals.
  • Reliable Switching Performance: Ensures consistent and dependable switching operation.
  • Versatile Applications: Suitable for a wide range of circuit designs.
  • Simplified Integration: Easily incorporated into existing electronic circuits.
  • Cost-Effective Solution: Provides a balance of performance and affordability.

The 2SA1020 typically has a collector-emitter voltage (VCEO) of -50V, a collector current (IC) of -800mA, and a power dissipation of 800mW. The DC current gain (hFE), which is gain ranking ‘Y’ in this instance, will have a defined range. The transistor is commonly available in a TO-92 package. Consult the manufacturer's datasheet for precise specifications, including electrical characteristics, thermal ratings, and package dimensions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.4662 $58.9254
41+ $2.8436 $116.5876
63+ $2.7547 $173.5461
87+ $2.6657 $231.9159
113+ $2.5768 $291.1784
150+ $2.3112 $346.6800
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MOQ: 17 pcs
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