The 2SA1306A is a PNP epitaxial silicon transistor from Toshiba Semiconductor and Storage, primarily intended for use in high-power audio amplifier applications. Characterized by its high collector current, high voltage, and excellent linearity, it is designed to deliver high-fidelity audio reproduction with minimal distortion.

Applications

• High-power audio amplifiers
• Linear power amplifiers
• Hi-Fi audio equipment
• Professional audio systems
• Home theater systems

Features

• PNP Epitaxial Silicon Transistor
• High collector current (IC = -15A)
• High collector-emitter voltage (VCEO = -230V)
• Low saturation voltage
• Excellent hFE linearity
• High power dissipation (PC = 150W)

Benefits

• Provides high-quality audio amplification with minimal distortion.
• Ensures stable and reliable operation in high-voltage circuits.
• Delivers efficient power handling in audio amplifier stages.
• Enhances the overall performance of high-end audio equipment.
• Reduces heat generation in power amplifier designs.

Additional Details

The 2SA1306A features a collector-base voltage (VCBO) of -230V and an emitter-base voltage (VEBO) of -5V. The DC current gain (hFE) typically ranges from 50 to 200. The transition frequency (fT) is around 30 MHz. It is typically packaged in a TO-3P or similar high-power package, which facilitates efficient heat dissipation. The operating temperature range is from -55°C to +150°C. Complementary NPN transistor is 2SC3281A.