The 2SA1931 is a PNP epitaxial silicon transistor manufactured by Toshiba Semiconductor and Storage. Designed primarily for audio amplifier and general-purpose applications, it is known for its low noise characteristics and high gain. The 'Q' likely designates a specific gain rank, while '(J' is likely a packing/production code.

Applications

• Audio amplifier circuits (preamps, headphone amps)
• Low-noise amplifiers
• General-purpose amplification
• Signal processing circuits
• Voltage amplifiers

Features

• PNP Epitaxial Silicon Transistor
• Low noise figure
• High gain (hFE)
• Low saturation voltage
• High fT (transition frequency): 100 MHz
• RoHS Compliant

Benefits

• Provides high-quality audio amplification with minimal noise.
• Enables efficient amplification of weak signals.
• Ensures stable and reliable performance in various applications.
• Offers enhanced signal processing capabilities.
• Reduces distortion in amplifier circuits.

Additional Details

The 2SA1931 features a collector-emitter voltage (VCEO) of -50V, a collector-base voltage (VCBO) of -60V, and an emitter-base voltage (VEBO) of -5V. The DC current gain (hFE) for the 'Q' rank falls within a specific range, typically between 200 and 400. The power dissipation (PC) is usually around 0.2W. It is commonly available in a small signal package such as SOT-23 or similar. It's widely used in portable audio devices and consumer electronics. Complementary NPN transistor is 2SC5171.