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Same model may have multiple batches, images only for reference.
2SB1020A(F)
Same model may have multiple batches, images only for reference.

2SB1020A(F)

Part No 2SB1020A(F)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans Darlington PNP 100V 7A 3-Pin(3+Tab) TO-220NIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Collector Base Voltage (VCBO) 100 V
Collector Emitter Saturation Voltage 1.5 V
Collector Emitter Voltage (VCEO) 100 V
Emitter Base Voltage (VEBO) 5 V
Lead Free Yes
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Polarity PNP
RoHS Compliant
Win Source Part Number 976283-2SB1020A(F)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SB1020A(F) CAD Model

Description

The 2SB1020A(F) by Toshiba Semiconductor and Storage is a PNP bipolar junction transistor (BJT) that has a collector-base voltage (VCBO) of 100V and a collector-emitter voltage (VCEO) of 100V.

  • Collector-Base Voltage (VCBO): 100V
  • Collector-Emitter Voltage (VCEO): 100V
  • Maximum Collector Current (Ic): 3A
  • Power Dissipation: 20W
  • Packaging: through-hole
  • RoHS Compliant: Yes
  • Supply and Demand Status: currently facing a shortage in supply and demand
  • Maximum Operating Temperature: 150°C
  • Minimum Operating Temperature: -55°C

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