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Same model may have multiple batches, images only for reference.
2SC2229-O(MIT1F,M) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SC2229-O(MIT1F,M)

Part No 2SC2229-O(MIT1F,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS NPN 50MA 150V TO226-3
Datasheet
2SC2229-O(MIT1F,M) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity NPN
Maximum Current Collector 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage 150V
Max Vce (sat) 500mV @ 1mA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 70 @ 10mA, 5V
Maximum Power Dissipation 800mW
Frequency - Transition 120MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-92MOD
Win Source Part Number 1004342-2SC2229-O(MIT1F,M)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SC2229-O(MIT1F,M) CAD Model

Description

The Toshiba Semiconductor and Storage 1004342-2SC2229-O(MIT1F,M) is a through-hole NPN transistor with a maximum current collector of 50mA and a maximum collector-emitter breakdown voltage (VCEO) of 150V.

  • Frequency Transition: 120MHz
  • Transistor Polarity: NPN
  • Collector Cut-off Current (Max): 100nA (ICBO)
  • Typical Gain (hFE) (Min): 70 @ 10mA, 5V
  • Maximum Power Dissipation: 800mW
  • Maximum Vce (sat): 500mV @ 1mA, 10mA
  • Package: TO-92MOD
  • Popularity: Popular among users

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