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2SC2859-GR

Part No 2SC2859-GR
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS NPN 30V 0.5A S-MINI
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 250mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 100mA, 1V
Maximum Power Dissipation 150mW
Frequency - Transition 300MHz
Temperature Range - Operating 125°C (TJ)
Mounting SMD (SMT)
Case / Package S-Mini
Win Source Part Number 114523-2SC2859-GR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SC2859-GR CAD Model

Description

The 2SC2859-GR is a high-frequency NPN silicon transistor designed to provide excellent performance in amplifier and switching applications. Known for its reliability and efficiency, this component is ideal for a wide range of electronic projects that require precise amplification and fast switching speeds.

Features and Benefits

  • High-Frequency Performance: Optimized for applications requiring swift signal amplification and processing.
  • Durability: Constructed with resilient silicon materials to ensure longevity and minimal degradation over time.
  • Consistent Gain: Offers a stable current gain, making it suitable for complex amplifier circuits.

Applications

  • RF Amplifiers
  • Signal Processing Circuits
  • High-Speed Switching Applications
  • DIY Electronic Projects

Additional Details

The 2SC2859-GR transistor is a widely used component in electronic design, especially for enthusiasts and professionals developing RF technology and communication devices. Its robust design and stable gain parameters make it an excellent choice for applications demanding reliability and precision.

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