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2SC2881-Y(TE12L,ZC

Part No 2SC2881-Y(TE12L,ZC
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description PB-F POWER TRANSISTOR PW-MINI PC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 800 mA
Voltage - Collector Emitter Breakdown (Max) 120 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 5V
Power - Max 500 mW
Frequency - Transition 120MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package PW-MINI
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 959962-2SC2881-Y(TE12L,ZC
Ultra Librarian 3D Model Ultra Librarian 2SC2881-Y(TE12L,ZC CAD Model

Description

The 2SC2881-Y(TE12L,ZC) is a NPN bipolar transistor that offers a maximum power dissipation of 500mW.

  • Maximum Collector-Emitter Breakdown Voltage: 120V
  • Maximum Collector Current: 800mA
  • Vce Saturation: 1V @ a base current of 50mA and a collector current of 500mA
  • DC Current Gain: 120 @ a collector current of 100mA and a collector-emitter voltage of 5V
  • The 2SC2881-Y(TE12L,ZC) is a reliable and efficient transistor suitable for various applications in the field of discrete semiconductor products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
260+ $0.1947 $50.6220
630+ $0.1598 $100.6740
970+ $0.1548 $150.1560
1,340+ $0.1498 $200.7320
1,730+ $0.1448 $250.5040
2,315+ $0.1298 $300.4870
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 185,000 pieces
MOQ: 260 pcs
Order Increment : 1 pcs
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