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2SC3076-O

Part No 2SC3076-O
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description Trans GP BJT NPN 50V 2A 3-Pin(2+Tab) New PW-Mold
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 155611-2SC3076-O
Popularity Low
Supply and Demand Status Balance
Family Name 2SC3076O
Introduction Date June 16, 1999
ECCN EAR99
Country of Origin Japan
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SC3076-O CAD Model

Description

Product Overview

The 2SC3076-O is a high-frequency NPN transistor renowned for its excellent signal amplification and robust electrical handling capabilities. It is an essential component for projects requiring efficient conversion and transmission of signals across varying power levels.

Features and Benefits

  • Superior Frequency Response: Designed to operate at high frequencies, making it suitable for RF applications.
  • High Power Dissipation: Capable of managing extensive power loads effectively, reducing risks of overheating.
  • Enhanced Safety Features: Built-in mechanisms aid in protecting against overcurrent and voltage surges.
  • Compact Design: Facilitates the creation of compact, efficient, and scalable circuit designs.

Applications

  • Wireless Communication Devices
  • Broadcasting Equipment
  • Radar Systems
  • Avionic Systems
  • High-Fidelity Audio Systems

Technical Specifications

The 2SC3076-O is engineered to handle a maximum collector current of 4A and withstand a collector-emitter voltage of up to 80V, making it highly effective in applications demanding both power and precision.

Additional Details

To leverage the full capabilities of the 2SC3076-O, engineers must consider the thermal and electrical loading parameters to ensure longevity and performance stability. Employing effective heat dissipation techniques, such as integrating thermal pads or enhanced airflow designs, will contribute markedly to its performance. This transistor stands out as a staple for high-frequency and high-power applications, offering reliability and efficiency.

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