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2SC3112-B(M)

Part No 2SC3112-B(M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description Trans GP BJT NPN 50V 0.15A 3-Pin TO-92
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 155630-2SC3112-B(M)
Popularity Low
Supply and Demand Status Limited
Family Name 2SC3112-B
Introduction Date December 17, 1998
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SC3112-B(M) CAD Model

Description

Overview of 2SC3112-B(M)

The 2SC3112-B(M) is a top-tier NPN bipolar junction transistor distinguished by its efficiency and high-frequency response. It is designed to meet the demanding needs of modern electronic systems.

Features and Benefits

  • High-Speed Switching: Developed for superior speed, facilitating quick transitions in digital circuits.
  • High Voltage Tolerance: Equipped to handle voltage levels that enhance system design capabilities.
  • Durable Design: Built for longevity and repeated operations without degradation.
  • Excellent Gain Frequency: Features high gain bandwidth product for effective signal amplification.

Applications

  • Television Receivers
  • High-Frequency Amplifiers
  • Computer Circuits
  • Automotive Electronics

Additional Details

With its high current capacity and reliable performance across temperature variations, the 2SC3112-B(M) is optimal for high-tech environments demanding rapid and reliable electronic responses.

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