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2SC5110-Y

Part No 2SC5110-Y
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description Trans RF BJT NPN 10V 0.06A 3-Pin USM
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 156925-2SC5110-Y
Popularity Low
Supply and Demand Status Balance
Family Name 2SC5110Y
Introduction Date October 21, 1997
ECCN EAR99
Estimated EOL Date Not Applicable
Ultra Librarian 3D Model Ultra Librarian 2SC5110-Y CAD Model

Description

2SC5110-Y Transistor - High-Gain NPN Silicon Transistor

The 2SC5110-Y is a high-gain NPN silicon transistor, commonly employed in electronics requiring significant signal amplification. The robust nature of this transistor makes it suitable for a range of applications from audio systems to power management solutions, ensuring reliable performance across the board.

Applications and Projects

  • Home Audio Systems
  • Signal Amplification Modules
  • Switch-Mode Power Supplies
  • Output Stage of Amplifiers
  • General Purpose Switching

Key Features and Benefits

  • High Gain Output: Enhances weak signals, improving the overall output clarity and strength.
  • Robust Design: Built to handle a variety of environmental conditions without compromising on performance.
  • Energy Efficient: Consumes minimal power, making it ideal for green technology projects.
  • Versatile Applications: Can be used in diverse electronic designs, offering engineers flexibility in circuit design.
  • Stable Across Temperatures: Maintains consistent performance despite temperature variations.

The 2SC5110-Y transistor serves as a reliable component for both amateur and professional electronic projects, appreciated for its durability and proficiency in high-gain applications.

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