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2SC5376-A

Part No 2SC5376-A
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans GP BJT NPN 12V 0.4A 3-Pin SSM
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 157042-2SC5376-A
Popularity Low
Supply and Demand Status Sufficient
Family Name 2SC5376A
Introduction Date November 01, 1998
ECCN EAR99
Country of Origin Japan
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SC5376-A CAD Model

Description

The 2SC5376-A epitomizes excellence in high-power NPN transistors, tailored for robust applications requiring high voltage, current handling, and superior reliability. Its strategic design makes it ideal for a multitude of electronic projects demanding top-notch performance.

Applications

  • Industrial Power Supplies
  • High-Power Audio Amplification
  • DC-AC Inverters
  • Electric Vehicle Systems
  • Telecommunications Equipment

Features and Benefits

  • Exceptional Power Handling: Capable of sustaining high-power levels without compromising performance.
  • Thermal Stability: Advanced construction that minimizes heat stress over prolonged periods.
  • Low On-Resistance: Enhances efficiency by minimizing electrical losses.
  • Reliable Performance: Ensures consistent operation in harsh and demanding environments.

Additional Details

Built for endurance, the 2SC5376-A utilizes innovative semiconductor technologies to achieve remarkable efficiencies in power management systems. The transistor's stability under various thermal conditions makes it indispensable for high-reliability applications where performance cannot be compromised. Its small footprint aids in the development of compact, powerful systems that meet the stringent demands of modern electronics.

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Shipping Information

Shipped from HK warehouse
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