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Same model may have multiple batches, images only for reference.
RN2910FE,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2910FE,LF

Part No RN2910FE,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.1W ES6
Datasheet
RN2910FE,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Typical Gain (hFE) (Min) 120 @ 1mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 102862-RN2910FE,LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN2910FE,LF CAD Model

Description

The Toshiba Semiconductor and Storage RN2910FE,LF is a dual PNP pre-biased transistor in ES6 package.

  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 100mA
  • Typical Gain: 120 @ 1mA and 5V
  • Maximum Power Dissipation: 100mW
  • Collector Cut-off Current: 100nA
  • Frequency Transition: 200MHz
  • Maximum Vce (sat): 300mV @ 250μA and 5mA
  • Resistor-Base (R1): 4.7k ohms
  • Resistor-Emitter Base (R2): None
  • Used in: Discrete semiconductor products
  • Status: Currently active in the market

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235+ $0.7380 $173.4300
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560+ $0.6191 $346.6960
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