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2SJ380

Part No 2SJ380
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 12A TO220NIS
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 48nC @ 10V
Max Input Capacitance 1100pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 210 mOhm @ 6A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220NIS
Dimension TO-220-3 Full Pack
Win Source Part Number 075571-2SJ380
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SJ380 CAD Model

Description

Product Overview

The 2SJ380 is a highly efficient and robust P-channel MOSFET transistor designed for various industrial and consumer electronic applications. It is known for its exceptional performance in switching tasks and power management solutions. As a versatile component, the 2SJ380 is ideal for use in numerous electronic circuits where efficient voltage regulation is crucial.

Features and Benefits

  • Low On-State Resistance: Offers reduced power loss and lower heat generation, leading to improved efficiency.
  • High-Speed Switching: Ensures fast and reliable operation in dynamic electronic environments.
  • Rugged Construction: The sturdy build enhances durability, making it suitable for industrial applications.
  • Wide Temperature Range: Operates effectively over a broad temperature spectrum, ensuring reliability in extreme conditions.

Applications

  • DC-DC converters
  • Battery-powered devices
  • Load switch applications
  • Power management systems

Additional Details

With its compact form factor and high efficiency, the 2SJ380 is an excellent choice for designers looking to optimize space and performance in their projects. The device's ability to operate at low voltages makes it particularly valuable in portable and energy-sensitive applications.

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