The Toshiba Semiconductor and Storage 2SK2967(F) is an N-channel MOSFET transistor with a maximum drain-to-source voltage of 250V and a continuous drain current of 30A @ 25°C.

• Maximum drain-to-source voltage: 250V
• Continuous drain current: 30A @ 25°C
• Maximum on-resistance: 68mOhm @ 15A and 10V gate-source voltage
• Gate threshold voltage: 3.5V @ 1mA
• Gate charge: 132nC @ 10V gate-source voltage
• Input capacitance: 5400pF @ 10V drain-source voltage
• Maximum gate-source voltage: ±20V
• Power dissipation: 150W @ a junction temperature of 150°C.
• Package: through-hole TO-3P-3, SC-65-3 package with 2 terminations.