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2SK3438(TE24L)

Part No 2SK3438(TE24L)
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Description Trans MOSFET N-CH Si 600V 10A 4-Pin(2+2Tab) TFP T/R
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 160052-2SK3438(TE24L)
Popularity Low
Supply and Demand Status Balance
Family Name 2SK3438
Introduction Date July 01, 2003
ECCN EAR99
Country of Origin Japan
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SK3438(TE24L) CAD Model

Description

Overview of 2SK3438(TE24L)

The 2SK3438(TE24L) is a high-performance N-channel MOSFET that offers a blend of efficiency and reliability, making it an ideal choice for a wide range of power management applications. With its robust design, this component supports significant power levels while maintaining low on-resistance and excellent switching characteristics.

Features and Benefits

  • Low On-Resistance: Minimizes power loss and ensures efficient performance.
  • High-Speed Switching: Enhances the response time in electronic circuits, allowing for precise control.
  • Rugged Construction: Capable of withstanding challenging environmental conditions.
  • Wide Range of Operating Voltages: Suitable for various power levels.

Applications

  • Switching Power Supplies: Ideal for improving efficiency in power supply units.
  • Motor Control: Excellent for use in automotive and industrial motor control systems.
  • Inverters: Can be utilized in designing inverters for solar power installations.
  • PFC Circuits: A suitable component for power factor correction circuits to enhance power efficiency.

Additional Details

The 2SK3438(TE24L) is manufactured with advanced semiconductor technology, ensuring high reliability and long operational life. Its compact package makes it easy to install and integrate into existing electronic designs. Moreover, adherence to stringent quality standards ensures that this MOSFET meets the demands of modern electronic applications, providing engineers with a dependable solution for power-switching needs.

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