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Same model may have multiple batches, images only for reference.
2SK3669(Q)
Same model may have multiple batches, images only for reference.

2SK3669(Q)

Part No 2SK3669(Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 10 A
Drain to Source Resistance 125 mΩ
Element Configuration Single
Gate to Source Voltage (Vgs) 20 V
Height 2.3 mm
Input Capacitance 480 pF
Length 6.5 mm
Maximum Operating Temperature 150 °C
Max Power Dissipation 20 W
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 3
RoHS Compliant
Width 5.5 mm
Win Source Part Number 1066631-2SK3669(Q)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SK3669(Q) CAD Model

Description

The Toshiba Semiconductor and Storage 2SK3669(Q) is a high power RF transistor designed for use in a wide range of applications.

  • Input Capacitance: 480pF
  • Output Current Capability: High
  • Drain to Source Resistance: Low
  • RoHS Compliance: Compliant
  • Package: Surface Mount

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