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Same model may have multiple batches, images only for reference.
JDP2S12CR Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

JDP2S12CR

Part No JDP2S12CR
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Diodes
Description Diode PIN Switch 180V 1000mA 2-Pin S-FLAT T/R / DIODE PIN 180V 1A S-FLAT
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Cut Reel
Diode Type PIN - Single
Voltage - Peak Reverse (Max) 180V
Current - Max 1A
Capacitance @ Vr, F 1.3pF @ 40V, 1MHz
Resistance @ If, F 700 mOhm @ 10mA, 100MHz
Temperature Range - Operating 175°C (TJ)
Case / Package S-FLAT (1.6x3.5)
Win Source Part Number 109105-JDP2S12CR
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name JDP2S12CR
Introduction Date January 19, 2010
ECCN EAR99
Country of Origin Malaysia
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian JDP2S12CR CAD Model

Description

The JDP2S12CR is a high-speed switching diode designed for use in various RF applications.

  • It features low capacitance, low resistance, and high peak reverse voltage capability.
  • This diode is available in a compact S-FLAT (1.6x3.5) package and operates at a temperature range of -55°C to +175°C.
  • It is an ideal solution for various RF applications, including mixers, detectors, and modulators.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3456 $60.5520
105+ $1.1042 $115.9410
165+ $1.0695 $176.4675
225+ $1.0349 $232.8525
290+ $1.0002 $290.0580
390+ $0.8974 $349.9860
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Availability: 30,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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