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Same model may have multiple batches, images only for reference.
MT3S111P Real Image
Same model may have multiple batches, images only for reference.

MT3S111P

Part No MT3S111P
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans RF BJT NPN 6V 0.1A 300mW 4-Pin(3+Tab) PW-Mini / VHF-UHF Low-Noise, Low-Distortion Amplifier Applications
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 244830-MT3S111P
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name MT3S111P
ECCN EAR99
Country of Origin Malaysia
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian MT3S111P CAD Model

Description

The Toshiba Semiconductor and Storage MT3S111P is a high-performance transistor with a high frequency and low noise.

  • Popularity: High popularity in the market
  • Manufacturing Location: Malaysia
  • Estimated EOL date: 2028
  • Alternative Parts: 2SC5631-E, 2SC5631JR, 2SC5631, 2SC5631JR-E
  • Applications: Audio amplifiers, power amplifiers, and more

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3835 $59.4425
370+ $0.3142 $116.2540
570+ $0.3049 $173.7930
785+ $0.2945 $231.1825
1,015+ $0.2853 $289.5795
1,360+ $0.2553 $347.2080
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Availability: 41,000 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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