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Same model may have multiple batches, images only for reference.
RN1102 Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1102

Part No RN1102
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 50V 0.15W VESM
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 50 @ 10mA, 5V
Max Vce (sat) 300mV @ 500μA, 5mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package VESM
Win Source Part Number 183536-RN1102
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1102 CAD Model

Description

The electronic component with Id 304000 is a medium popularity product manufactured by Toshiba Semiconductor and Storage.

  • Popularity: medium
  • Manufacturer: Toshiba Semiconductor and Storage
  • Type: pre-biased NPN transistor
  • Maximum Current Collector: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Package: VESM
  • Maximum Power Dissipation: 150mW

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,725+ $0.0335 $57.7875
4,170+ $0.0277 $115.5090
6,525+ $0.0266 $173.5650
8,700+ $0.0266 $231.4200
11,365+ $0.0254 $288.6710
15,000+ $0.0231 $346.5000
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MOQ: 1725 pcs
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