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Same model may have multiple batches, images only for reference.
RN1106CT(TPL3) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1106CT(TPL3)

Part No RN1106CT(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.05W CST3
Datasheet
RN1106CT(TPL3) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage 20V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 120 @ 10mA, 5V
Max Vce (sat) 150mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 50mW
Mounting SMD (SMT)
Case / Package CST3
Win Source Part Number 100836-RN1106CT(TPL3)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1106CT(TPL3) CAD Model

Description

The RN1106CT(TPL3) transistor is a product of Toshiba Semiconductor and Storage.

  • Product Type: discrete semiconductor product
  • Polarity Family: NPN Pre-Biased transistor
  • Status: obsolete (EOL)
  • Popularity: medium
  • Supply and Demand: sufficient
  • Maximum Current Collector: 50mA
  • Maximum Collector-Emitter Breakdown Voltage: 20V
  • Maximum Power Dissipation: 50mW
  • Typical Gain: 120 @ 10mA and 5V

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