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2SA1200-Y

Part No 2SA1200-Y
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description Trans GP BJT PNP 150V 0.05A 800mW 4-Pin(3+Tab) PW-Mini
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 153441-2SA1200-Y
Popularity Low
Supply and Demand Status Balance
Family Name 2SA1200Y
Introduction Date March 05, 1998
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SA1200-Y CAD Model

Description

2SA1200-Y Transistor

The 2SA1200-Y is a PNP epitaxial silicon transistor known for its reliability and efficiency in driving applications. Its compact design and robust features make it ideal for various electronic projects requiring high performance and stability.

Features and Benefits

  • High current gain bandwidth product
  • Low saturation voltage
  • Robust collector-emitter voltage rating
  • Compact form factor for efficient PCB design

Applications

  • Audio amplifiers
  • Switching applications
  • Signal processing
  • Voltage regulation circuits

This transistor is widely used due to its excellent switching characteristics and reliability in harsh environments, making it a preferred choice for engineers and designers.

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Pricing & Ordering

Quantity Unit Price Ext. Price
480+ $0.1049 $50.3520
1,165+ $0.0861 $100.3065
1,800+ $0.0834 $150.1200
2,480+ $0.0807 $200.1360
3,210+ $0.0780 $250.3800
4,290+ $0.0700 $300.3000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 64,500 pieces
MOQ: 480 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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