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Same model may have multiple batches, images only for reference.
RN1110MFV,L3F Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1110MFV,L3F

Part No RN1110MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.15W VESM
Datasheet
RN1110MFV,L3F Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Typical Gain (hFE) (Min) 120 @ 1mA, 5V
Max Vce (sat) 300mV @ 500μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package VESM
Win Source Part Number 096297-RN1110MFV,L3F
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1110MFV,L3F CAD Model

Description

The RN1110MFV,L3F is a transistor manufactured by Toshiba Semiconductor and Storage.

  • Type: NPN transistor
  • Usage: electronic devices that require switching and amplification
  • Supply and Demand: sufficient
  • Maximum Current Collector: 100mA
  • Maximum Power Dissipation: 150mW

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295+ $0.3962 $116.8790
455+ $0.3835 $174.4925
625+ $0.3708 $231.7500
805+ $0.3592 $289.1560
1,080+ $0.3222 $347.9760
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