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Same model may have multiple batches, images only for reference.
RN1110MFV(TL3,T)
Same model may have multiple batches, images only for reference.

RN1110MFV(TL3,T)

Part No RN1110MFV(TL3,T)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans Digital BJT NPN 50V 100mA 3-Pin VESM T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOT-723
Collector Emitter Breakdown Voltage 50 V
Collector Emitter Voltage (VCEO) 300 mV
Element Configuration Single
Max Breakdown Voltage 50 V
Max Collector Current 100 mA
Maximum Operating Temperature 150 °C
Max Power Dissipation 150 mW
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 3
Packaging Tape & Reel (TR)
Radiation Hardening No
RoHS Compliant
Win Source Part Number 972608-RN1110MFV(TL3,T)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian RN1110MFV(TL3,T) CAD Model

Description

The Toshiba Semiconductor and Storage RN1110MFV(TL3,T) is a surface mount RF transistor with a Win Source Part Number of 972608.

  • Win Source Part Number: 972608
  • Pins: three
  • Package: tape and reel
  • Maximum Power Dissipation: 150 mW
  • Max Breakdown Voltage: 50 V
  • Collector-Emitter Breakdown Voltage: 50 V
  • Collector-Emitter Voltage (VCEO): 300 mV
  • Maximum Collector Current: 100 mA
  • Operating Temperature Range: -55 °C to 150 °C
  • Supply and Demand Status: shortage

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1,330+ $0.1305 $173.5650
1,835+ $0.1259 $231.0265
2,360+ $0.1224 $288.8640
3,160+ $0.1097 $346.6520
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Availability: 290,545 pieces
MOQ: 355 pcs
Order Increment : 1 pcs
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