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Same model may have multiple batches, images only for reference.
TPN1200APL,L1Q Toshiba Semiconductor and Storage – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

TPN1200APL,L1Q

Part No TPN1200APL,L1Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors – FETs, MOSFETs – Single
Description PB-F POWER MOSFET TRANSISTOR TSO
Datasheet
TPN1200APL,L1Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 11.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1855 pF @ 50 V
Power Dissipation (Max) 630mW (Ta), 104W (Tc)
Operating Temperature 175°C
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.1x3.1)
Package / Case 8-PowerVDFN
Ultra Librarian 3D Model Ultra Librarian TPN1200APL,L1Q CAD Model

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90+ $0.5676 $51.0840
215+ $0.4657 $100.1255
335+ $0.4512 $151.1520
460+ $0.4366 $200.8360
595+ $0.4221 $251.1495
795+ $0.3784 $300.8280
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