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RN2911FE(TE85L,F)

Part No RN2911FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.1W ES6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Typical Gain (hFE) (Min) 120 @ 1mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 098196-RN2911FE(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN2911FE(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage RN2911FE(TE85L,F) is a dual PNP pre-biased transistor designed for use in discrete semiconductor products.

  • Maximum Collector Current: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Ideal for: Use in a variety of electronic applications
  • Package: ES6 case
  • Mounting: Surface-mount technology
  • Transition Frequency: 200MHz
  • Typical Gain: 120 @ 1mA and 5V
  • Maximum Power Dissipation: 100mW
  • Collector Cut-off Current: 100nA
  • Saturation Voltage: 300mV @ 250μA and 5mA
  • Suitable for: Low-power applications
  • Production Status: Currently in active production
  • Market Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.6006 $63.6036
14+ $8.6983 $121.7762
21+ $8.4269 $176.9649
29+ $8.1543 $236.4747
37+ $7.8829 $291.6673
50+ $7.0674 $353.3700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,200 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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