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Same model may have multiple batches, images only for reference.
RN1113CT(TPL3) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1113CT(TPL3)

Part No RN1113CT(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.05W CST3
Datasheet
RN1113CT(TPL3) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage 20V
Resistor - Base (R1) (Ohms) 47k
Typical Gain (hFE) (Min) 300 @ 1mA, 5V
Max Vce (sat) 150mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Maximum Power Dissipation 50mW
Mounting SMD (SMT)
Case / Package CST3
Win Source Part Number 098373-RN1113CT(TPL3)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1113CT(TPL3) CAD Model

Description

This electronic component is a pre-biased NPN transistor manufactured by Toshiba Semiconductor and Storage.

  • Packaging: Reel
  • Mounting: Surface Mountable
  • Maximum Current Collector: 50mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 20V
  • Maximum Vce (sat): 150mV @ 250μA, 5mA
  • Collector Cut-off Current (Max): 100nA (ICBO)
  • Typical Gain (hFE) (Min): 300 @ 1mA, 5V
  • Maximum Power Dissipation: 50mW
  • Supply and Demand Status: Sufficient

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