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Same model may have multiple batches, images only for reference.
RN1115,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1115,LF

Part No RN1115,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.1W SSM
Datasheet
RN1115,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 50 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package SSM
Win Source Part Number 098792-RN1115,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1115,LF CAD Model

Description

The Toshiba Semiconductor and Storage discrete semiconductor product is a high-quality electronic component designed for use in a variety of applications.

  • Transistor Type: NPN - Pre-Biased
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Frequency Transition: 250MHz
  • Typical Gain (hFE) (Min): 50 @ 10mA, 5V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • Maximum Power Dissipation: 100mW
  • Operating Temperature Range: -40°C to 85°C
  • Case/Package: SSM
  • Status: Active
  • Supply and Demand Status: Sufficient

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