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Same model may have multiple batches, images only for reference.
RN1115MFV,L3F Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1115MFV,L3F

Part No RN1115MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 50V SOT723
Datasheet
RN1115MFV,L3F Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 50 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package VESM
Win Source Part Number 1092457-RN1115MFV,L3F
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1115MFV,L3F CAD Model

Description

The supply and demand status of this product is sufficient. This transistor is designed for use in electronic circuits, and its package is SMD (SMT).

  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 100mA
  • Collector Cut-off Current: 500nA
  • Typical Gain (hFE): 50 @ 10mA and 5V
  • Maximum Power Dissipation: 150mW

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