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Same model may have multiple batches, images only for reference.
SIR870ADP-T1-RE3 Real Image
Same model may have multiple batches, images only for reference.

SIR870ADP-T1-RE3

Part No SIR870ADP-T1-RE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 60A PPAK SO-8 / N-Channel 100 V 60A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8
Datasheet
SIR870ADP-T1-RE3 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2866 pF @ 50 V
Power Dissipation (Max) 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIR870
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1351923-SIR870ADP-T1-RE3
Ultra Librarian 3D Model Ultra Librarian SIR870ADP-T1-RE3 CAD Model

Description

The SIR870ADP-T1-RE3 is a N-channel MOSFET transistor from Vishay Siliconix's TrenchFET® series.

  • Channel Type: N-Channel
  • Series: TrenchFET®
  • Package: PowerPAK® SO-8
  • Mounting Type: Surface Mount
  • Drain to Source Voltage: 100V
  • Power Dissipation (Max): 104W (Tc)
  • Vgs (Max): ±20V
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Continuous Drain Current (Id) @ 25°C: 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2866 pF @ 50 V
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Temperature Range: -55°C to 150°C (TJ)

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