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TSM180N03PQ33 RGG

Part No TSM180N03PQ33 RGG
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, SINGLE, N-CHANNEL, TRENC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Taiwan Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 4.1nC @ 4.5V
Max Input Capacitance 345pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 21W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 12A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-PDFN (3x3)
Dimension 8-PowerWDFN
Win Source Part Number 1114715-TSM180N03PQ33 RGG
Popularity Medium
Supply and Demand Status Balance
Quantity per package 5k pcs
Ultra Librarian 3D Model Ultra Librarian TSM180N03PQ33 RGG CAD Model

Description

The TSM180N03PQ33 RGG is an N-Channel MOSFET manufactured by Taiwan Semiconductor.

  • Category: Discrete Semiconductor Products
  • Packaging: Reel - TR
  • Power Dissipation: 21W
  • Continuous Drain Current: 25A @ 25°C
  • Maximum Rds On @ Id, Vgs: 18 mOhm @ 12A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
255+ $0.2280 $58.1400
620+ $0.1871 $116.0020
960+ $0.1813 $174.0480
1,320+ $0.1755 $231.6600
1,705+ $0.1696 $289.1680
2,280+ $0.1520 $346.5600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 40,000 pieces
MOQ: 255 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

Shipping Information

Shipped from HK warehouse
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