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RN1117MFV

Name: RN1117MFV
Brand: Toshiba Semiconductor and Storage
SKU: 296926
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	RN1117MFV
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors (BJT) - Single, Pre - Biased
Description	TRANS NPN PREBIAS 50V 100MA VESM
Datasheet	RN1117MFV Datasheet
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Toshiba Semiconductor and Storage
Status	Active
Transistor Polarity	NPN - Pre-Biased
Maximum Current Collector	100mA
VCEO Maximum Collector-Emitter Breakdown Voltage	50V
Resistor - Base (R1) (Ohms)	10k
Resistor - Emitter Base (R2) (Ohms)	4.7k
Typical Gain (hFE) (Min)	30 @ 10mA, 5V
Max Vce (sat)	300mV @ 500μA, 5mA
Collector Cut-off Current(Max)	500nA
Frequency - Transition	250MHz
Maximum Power Dissipation	150mW
Mounting	SMD (SMT)
Case / Package	VESM
Win Source Part Number	062558-RN1117MFV
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian RN1117MFV CAD Model

Alternative Products

Description

The RN1117MFV is a pre-biased NPN transistor from Toshiba Semiconductor and Storage.

Designed for: Use in discrete semiconductor products
Maximum Collector-Emitter Voltage: 50V
Maximum Collector Current: 100mA
Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
835+	$0.0602	$50.2670
2,025+	$0.0494	$100.0350
3,135+	$0.0479	$150.1665
4,315+	$0.0464	$200.2160
5,585+	$0.0448	$250.2080
7,465+	$0.0402	$300.0930

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 14,000 pieces

MOQ: 835 pcs

Order Increment : 1 pcs

Qty:

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Shipping Information

Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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