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Same model may have multiple batches, images only for reference.
RN1302SU,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1302SU,LF

Part No RN1302SU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.1W USM
Datasheet
RN1302SU,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 50 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package USM
Win Source Part Number 097344-RN1302SU,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1302SU,LF CAD Model

Description

The RN1302SU,LF is an electronic component manufactured by Toshiba Semiconductor and Storage, a leading global brand in the electronics industry.

  • Status: Active
  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Win Source Part Number: 097344-RN1302SU,LF
  • Transistor Polarity: NPN pre-biased
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 100mA
  • Typical Gain (hFE): 50 @ 10mA, 5V
  • Case/Package: USM
  • Maximum Power Dissipation: 100mW

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10,000+ $0.0116 $116.0000
15,000+ $0.0116 $174.0000
22,225+ $0.0104 $231.1400
27,780+ $0.0104 $288.9120
37,500+ $0.0092 $345.0000
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